A Single-Event Burnout Hardened Super-Junction Trench SOI LDMOS with Additional Hole Leakage Paths

In this paper, a novel super-junction trench silicon-on-insulator laterally-diffused metal-oxide-semiconductor (SJT SOI LDMOS) power device with additional hole leakage paths to improve single-event burnout (SEB) performance under high liner energy transfer (LET) is proposed for the first time. The electrical characteristics and SEB of SJT LDMOS are both enhanced effectively. replacement lightly doped N drift region heavily P pillar considerably improves tradeoff between breakdown voltage (BVDS) specific on-resistance (Ron,sp). Compared conventional (CT LDMOS), static figures merit (FOM, BVDS2/Ron,sp) increases by 239%. significantly improved as holes induced heavy ion can be quickly absorbed source metal through P+ buried rather than base resistor parasitic bipolar junction transistor (BJT). threshold (VSEB) CT 58 V (39% BVDS) that up 173 (87% at LET 1 pC/μm.